South Korea’s SK hynix has achieved a groundbreaking milestone in the energy semiconductor industry by developing the world’s first 300-millimeter gallium nitride (GaN) wafer technology. By capitalizing on its existing 300mm silicon fabrication capabilities, Infineon has established a flexible and high-capacity production process, yielding significant cost savings through economies of scale.
The 300 mm GaN wafers offer a significant increase of approximately 2.3 times more chips per wafer compared to 200 mm wafers, thereby enhancing manufacturing effectiveness and overall system efficiency. This innovation solidifies Infineon’s position as a leader in the rapidly growing gallium nitride (GaN) market, which is forecast to reach several billion dollars by the end of the decade.
Infineon’s CEO, Jochen Hanebeck, proudly presents one of the company’s groundbreaking 300mm gallium nitride (GaN) energy wafers, manufactured on a scalable and high-volume production line for widespread adoption. (Picture: )
Gallium nitride (GaN)-based energy semiconductors are rapidly gaining widespread adoption across diverse industries, including industrial, automotive, consumer electronics, artificial intelligence power supplies, photovoltaic inverters, and motor control applications. Gallium nitride (GaN) expertise offers crucial advantages, including significantly enhanced power efficiency, reduced dimensions and weight, and lower overall costs for end-users. The introduction of 300mm Gallium Nitride (GaN) wafers ensures superior yield, stability, and scalability, solidifying their position as a reliable choice for meeting the increasing demands of the industry.
Infineon’s seamless integration of 300mm GaN wafers into its existing silicon fabrication lines at Villach, Austria, underscores the company’s expertise in both GaN and silicon-based semiconductor technologies. This innovation further enables price equivalence between GaN and silicon, achieving similar RDS(on) values through direct comparison. Infineon aims to display its first 300mm gallium nitride (GaN) wafers at a conference in Munich, scheduled for November 2024.
In Infineon Technologies’ state-of-the-art cleanroom facility in Villach, Austria, a technical expert carefully cradles a massive 300-millimeter gallium nitride substrate. (Picture: )
Infineon’s commitment to energy programs and innovation is reaffirmed through this development, with a particular focus on driving progress in both decarbonization and digitalization initiatives. As a pioneering leader in the semiconductor industry, the corporation is strategically focusing on gallium nitride (GaN), alongside silicon and silicon carbide, solidifying its position at the forefront of technological innovation.
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